Processing apparatus and collimator

ABSTRACT

According to an embodiment, a processing apparatus includes a generator mount, a first-object mount, and a first collimator. A particle generator capable of emitting particles is placed on the generator mount. A first object is placed on the first-object mount. The first collimator is placed between the generator mount and the first-object mount, and has first walls and second walls. In the first collimator, the first walls and the second walls form first through holes extending in a first direction from the generator mount to the first-object mount. Each of the second walls is provided with at least one first passage.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.15/509,017, filed Mar. 6, 2017, which is a national stage application ofInternational Application No. PCT/JP2015/080966, filed Nov. 2, 2015,which designates the United States, incorporated herein by reference,and which claims the benefit of priority from Japanese PatentApplication No. 2014-225605, filed Nov. 5, 2014, the entire contents ofwhich are incorporated herein by reference.

FIELD

Embodiments described herein relate generally to a processing apparatusand a collimator.

BACKGROUND

For example, a sputtering apparatus that forms a metal film on asemiconductor wafer includes a collimator for aligning directions ofmetal particles to be deposited. The collimator has walls with a largenumber of through holes to allow to pass therethrough substantiallyvertically flying particles and to block obliquely flying particles withrespect to an object to be processed such as a semiconductor wafer.

The directions of the particles passing through the collimator can beinclined within a predetermined range relative to a desired direction.The collimator may block usable, obliquely flying particles in additionto unnecessary particles.

BRIEF DESCRIPTION OF DRAWINGS

FIG. 1 is a sectional view schematically illustrating a sputteringapparatus according to a first embodiment;

FIG. 2 is a perspective view illustrating a collimator according to thefirst embodiment;

FIG. 3 is a sectional view illustrating the collimator according to thefirst embodiment;

FIG. 4 is a sectional view schematically illustrating a target and thecollimator according to the first embodiment;

FIG. 5 is a sectional view schematically illustrating a part of acollimator according to a second embodiment;

FIG. 6 is a sectional view schematically illustrating a part of acollimator according to a third embodiment;

FIG. 7 is a sectional view schematically illustrating a part of acollimator according to a first modification of the third embodiment;

FIG. 8 is a sectional view schematically illustrating a part of acollimator according to a second modification of the third embodiment;

FIG. 9 is a sectional view schematically illustrating a part of acollimator according to a third modification of the third embodiment;

FIG. 10 is a sectional view schematically illustrating a part of acollimator according to a fourth modification of the third embodiment;

FIG. 11 is a perspective view schematically illustrating a part of acollimator according to a fourth embodiment;

FIG. 12 is a plan view illustrating a collimator according to a fifthembodiment;

FIG. 13 is a sectional view schematically illustrating a sputteringapparatus according to a sixth embodiment;

FIG. 14 is a sectional view schematically illustrating a target and acollimator according to a seventh embodiment; and

FIG. 15 is a sectional view schematically illustrating a target and acollimator according to an eighth embodiment.

DETAILED DESCRIPTION

According to an embodiment, a processing apparatus comprises a generatormount, a first-object mount, and a first collimator, a particlegenerator is placed on the generator mount. The particle generator iscapable of emitting particles. The first-object mount is spaced apartfrom the generator mount, on which a first object is placed, the firstobject receives the particles. The first collimator is placed betweenthe generator mount and the first-object mount, includes first walls andsecond walls, in which the first walls and the second walls form firstthrough holes extending in a first direction from the generator mount tothe first object mount, and each of the second walls is provided with atleast one first passage which penetrates the second wall and throughwhich the particles can pass.

A first embodiment is described below with reference to FIG. 1 to FIG.4. In the present specification, generally, vertically upward directionis defined to be upward and vertically downward direction is defined tobe downward. Constituent elements according to embodiments may beexpressed differently and may be described differently. Otherexpressions than those herein and other descriptions thereof should notbe precluded. Further, other expressions of constituent elements notgiven different expressions and their different descriptions should notbe precluded.

FIG. 1 is a sectional view schematically illustrating a sputteringapparatus 1 according to the first embodiment. The sputtering apparatus1 is an example of a processing apparatus. The sputtering apparatus 1forms a film of metal particles on a surface of a semiconductor wafer 2,for example. The semiconductor wafer 2 is an example of a first objectand an object. The sputtering apparatus 1 is not limited thereto, andfor example, can form a film on another object.

The sputtering apparatus 1 includes a processing chamber 11, a target12, a stage 13, and a collimator 14. The target 12 is an example of aparticle generator. The collimator 14 is an example of a firstcollimator and a collimator.

As illustrated in the drawings, in the present specification, an X-axis,a Y-axis, and a Z-axis are defined. The X-axis, the Y-axis, and theZ-axis are orthogonal to each other. The X-axis extends along the widthof the processing chamber 11. The Y-axis extends along the depth(length) of the processing chamber 11. The Z-axis extends along theheight of the processing chamber 11. In the following, it is assumedthat the Z-axis extends vertically. The Z-axis of the sputteringapparatus 1 can be inclined vertically.

The processing chamber 11 has a sealable box shape. The processingchamber 11 includes a top wall 21, a bottom wall 22, side walls 23, adischarge port 24, and a feed port 25. The top wall 21 and the bottomwall 22 are arranged opposite to each other in a direction along theZ-axis (vertical direction). The top wall 21 is located above the bottomwall 22 with a predetermined gap. The side walls 23 extend in thedirection along the Z-axis to connect the top wall 21 and the bottomwall 22.

The discharge port 24 opens into the processing chamber 11 and isconnected to a vacuum pump, for example. The vacuum pump sucks the airinside the processing chamber 11 from the discharge port 24, therebyplacing the inside of the processing chamber 11 in a vacuum state.

The feed port 25 opens into the processing chamber 11 and is connectedto a tank that stores therein an inert gas such as an argon gas. Theargon gas can be fed from the feed port 25 into the processing chamber11 in a vacuum state.

The target 12 is, for example, an annular metal plate used as a particlegenerator. The shape of the target 12 is not limited thereto and canhave a disk shape, for example. The target 12 is attached to an innerface 21 a of the top wall 21 of the processing chamber 11, for example,via a backing plate. The backing plate is used as a coolant and anelectrode of the target 12. The target 12 can be attached directly tothe top wall 21.

The inner face 21 a of the top wall 21 is an example of a generatormount. The inner face 21 a is substantially flat, facing downward. Thetarget 12 is placed on the inner face 21 a via the backing plate. Thegenerator mount is not limited to an independent member or part, and canbe a specific position of a certain member or part. The generator mountcan be the backing plate.

The target 12 has a bottom face 12 a. The bottom face 12 a issubstantially flat, facing downward. When a voltage is applied to thetarget 12, an argon gas fed into the processing chamber 11 is ionized togenerate plasma. Collision of argon ions with the target 12 causesparticles C of a film material of the target 12 to fly from the bottomface 12 a, for example. In other words, the target 12 can emit theparticles C.

The particles C are an example of particles in the present embodiment,and are fine particles of the film material forming the target 12. Theparticles can be various kinds of particles constituting a substance oran energy line such as molecules, atoms, atomic nuclei, elementaryparticles, vapor (vaporized substance), and electromagnetic waves(photons), which are smaller than the particles C.

The stage 13 is attached to the bottom wall 22 of the processing chamber11. That is, the stage 13 is disposed apart from the target 12 in thevertical direction. The bottom wall 22 can be used as an example of afirst stage, instead of the stage 13. The stage 13 has a mount face 13a. The mount face 13 a of the stage 13 supports the semiconductor wafer2. The semiconductor wafer 2 has, for example, a disk shape. Thesemiconductor wafer 2 can have a different shape.

The mount face 13 a of the stage 13 is an example of a first-objectmount, an emission target, and an object mount. The mount face 13 a issubstantially flat, facing upward. The mount face 13 a is verticallyspaced apart from the inner face 21 a of the top wall 21, facing theinner face 21 a. The semiconductor wafer 2 is mounted on the mount face13 a. The first-object mount, the emission target, and the object mountare not limited to an independent member or part, and can be a specificposition of a certain member or part.

The collimator 14 is placed between the target 12 and the stage 13 inthe direction along the Z-axis (vertical direction). In other words, thecollimator 14 is placed between the inner face 21 a of the top wall 21and the mount face 13 a of the stage 13 in the direction along theZ-axis (vertical direction). The direction along the Z-axis and thevertical direction are oriented from the inner face 21 a of the top wall21 toward the mount face 13 a of the stage 13, and an example of a firstdirection. That is, the collimator 14 is placed between the target 12and the semiconductor wafer 2. The collimator 14 is attached to, forexample, the side walls 23 of the processing chamber 11.

FIG. 2 is a perspective view illustrating the collimator 14. FIG. 3 is asectional view illustrating the collimator 14. As illustrated in FIG. 2and FIG. 3, the collimator 14 includes a frame 31 and a rectifier 32.

The frame 31 is a wall of a cylindrical shape extending in the verticaldirection. The frame 31 is not limited thereto, and can have a differentshape such as a rectangle. A sectional area of the frame 31 is largerthan a sectional area of the semiconductor wafer 2. The rectifier 32 isprovided inside the cylindrical frame 31 in an XY plane. The frame 31and the rectifier 32 are integrally formed.

The rectifier 32 includes shield walls 35, first communicating walls 36,and second communicating walls 37. The shield walls 35 are an example ofa first wall and a wall. The first and second communicating walls 36 and37 are an example of a second wall and a wall.

In the rectifier 32, the shield walls 35, the first communicating walls36, and the second communicating walls 37 form through holes 39. Thethrough holes 39 are an example of a first through hole and a throughhole. The through holes 39 are hexagonal holes extending in the verticaldirection. In other words, the shield walls 35, the first communicatingwalls 36, and the second communicating walls 37 form hexagonal cylinderincluding the through holes 39 (a honeycomb structure). The shape of thethrough holes 39 is not limited thereto.

As illustrated in FIG. 3, the rectifier 32 includes an top end 32 a anda bottom end 32 b. The top end 32 a is one vertical end of the rectifier32, and faces the target 12 and the inner face 21 a of the top wall 21.The bottom end 32 b is the other vertical end of the rectifier 32, andfaces the semiconductor wafer 2 supported on the stage 13 and the mountface 13 a of the stage 13.

The through holes 39 extend from the top end 32 a to the bottom end 32 bof the rectifier 32. That is, the through holes 39 open toward thetarget 12 and the semiconductor wafer 2 supported on the stage 13.

The shield walls 35, the first communicating walls 36, and the secondcommunicating walls 37 are substantially rectangular (square) platesextending in the vertical direction. That is, the shield walls 35, thefirst communicating walls 36, and the second communicating walls 37extend in the same direction.

The first communicating walls 36 are provided with first communicatingholes 41. The first communicating holes 41 are an example of a firstpassage and a passage, and may also be referred to as opening. The firstcommunicating holes 41 are, for example, parallelogram holes alignedvertically and horizontally. Herein, horizontal direction refers to adirection orthogonal to the Z-axis on the XY plane. The shape andarrangement of the first communicating holes 41 are not limited thereto.

The first communicating holes 41 are longer in length vertically thanhorizontally. The horizontal direction is an example of a directionorthogonal to the first direction and a direction orthogonal to anextending direction of the through holes. That is, the firstcommunicating holes 41 are vertically extending holes.

The first communicating holes 41 connect two through holes 39 that arepartitioned with each first communicating wall 36 provided with thefirst communicating holes 41. In other words, the first communicatingholes 41 penetrate the first communicating wall 36 and opens into onethrough hole 39 and its adjacent through hole 39.

The second communicating walls 37 are provided with second communicatingholes 42. The second communicating holes 42 are an example of a secondpassage and a passage. The second communicating holes 42 are, forexample, parallelogram holes aligned vertically and horizontally. Theshape and arrangement of the second communicating holes 42 are notlimited thereto.

The second communicating holes 42 are longer in length vertically thanhorizontally. That is, the second communicating holes 42 are verticallyextending holes.

The second communicating holes 42 connect two through holes 39 that arepartitioned with each second communicating wall 37 provided with thesecond communicating holes 42. In other words, the second communicatingholes 42 penetrate the second communicating wall 37 and opens into onethrough hole 39 and its adjacent through hole 39.

The second communicating holes 42 are larger than the firstcommunicating holes 41. The density of the second communicating holes 42in the second communicating wall 37 is larger than that of the firstcommunicating holes 41 in the first communicating wall 36. The densityof the second communicating holes 42 represents a ratio of the totalsize of the second communicating holes 42 to the size of the secondcommunicating wall 37. The second communicating holes 42 may be equal toor smaller in size than the first communicating holes as long as thedensity of the second communicating holes 42 in the second communicatingwall 37 is larger than that of the first communicating holes 41 in thefirst communicating wall 36.

The shield walls 35 each have a top end 35 a and a bottom end 35 b. Thefirst communicating walls 36 each have a top end 36 a and a bottom end36 b. The second communicating walls 37 each have a top end 37 a and abottom end 37 b.

The top ends 35 a, 36 a, and 37 a are one vertical ends of the shieldwalls 35, the first communicating walls 36, and the second communicatingwalls 37, respectively, and face the target 12 and the inner face 21 aof the top wall 21. The top ends 35 a, 36 a, and 37 a are an example ofone end in an extending direction of the through hole. The top ends 35a, 36 a, and 37 a form the top end 32 a of the rectifier 32.

The top end 32 a of the rectifier 32 is depressed in a curved form withrespect to the target 12 and the inner face 21 a of the top wall 21. Inother words, the top end 32 a of the rectifier 32 is curved so as to beaway from the target 12 and the inner face 21 a of the top wall 21. Thetop end 32 a is not limited thereto. For example, only a central part ofthe top end 32 a can be depressed with respect to the target 12 and theinner face 21 a of the top wall 21.

The bottom ends 35 b, 36 b, and 37 b are the other vertical ends of theshield walls 35, the first communicating walls 36, and the secondcommunicating walls 37, respectively, and face the semiconductor wafer 2supported on the stage 13 and the mount face 13 a of the stage 13. Thebottom ends 35 b, 36 b, and 37 b form the bottom end 32 b of therectifier 32.

The bottom end 32 b of the rectifier 32 projects in a curved form towardthe semiconductor wafer 2 supported on the stage 13 and the mount face13 a of the stage 13. The bottom end 32 b is not limited thereto. Forexample, only a central part of the bottom end 32 b can project towardthe mount face 13 a of the stage 13.

The top end 32 a and the bottom end 32 b of the rectifier 32 havesubstantially the same curved shape. The vertical lengths of the shieldwalls 35, the first communicating walls 36, and the second communicatingwalls 37 are substantially the same. The vertical lengths of the shieldwalls 35, the first communicating walls 36, and the second communicatingwalls 37 can be different depending on positions.

FIG. 4 is a sectional view schematically illustrating the target 12 andthe collimator 14. As illustrated in FIG. 2 and FIG. 4, the rectifier 32includes a first part 51 and a second part 52. The first part 51 is anexample of a first part and a region offset from the target. The secondpart 52 is an example of a second part and a region facing the target.The first and second parts 51 and 52 can be also referred to aspositions, ranges, and regions.

As illustrated by the dot-and-dash lines in FIG. 4, the first part 51faces a location offset from the target 12. In other words, the firstpart 51 is a part vertically opposite to the top wall 21. Thus, thefirst part 51 in the present embodiment is a circular part correspondingto an inner part of an annular target 12, for example.

As illustrated by the dot-and-dash lines in FIG. 4, the second part 52faces the target 12 in the vertical direction. In other words, thesecond part 52 is vertically aligned with the target 12 and locatedbelow the target 12. Thus, the second part 52 in the present embodimentis an annular part corresponding to the shape of the target 12, andlocated outside the first part 51 in the horizontal direction.

A flying direction of the particles C from the bottom face 12 a of thetarget 12 is found according to the cosine law (Lambert's cosine law).That is, the particles C flying from a certain point on the bottom face12 a mostly fly in a normal direction (vertical direction) of the bottomface 12 a. Thus, the vertical direction is an example of a direction inwhich the particle generator placed on the generator mount emits atleast one particle. The number of particles obliquely flying at an angleθd (obliquely crossing) with respect to the normal direction isapproximately proportional to the cosine (cos θ) of the number ofparticles flying in the normal direction.

In the following, the particles C emitted vertically from the target 12may be referred to as vertical components, and the particles C emittedfrom the target 12 in a vertically inclined direction may be referred toas oblique components. A ratio of the amount of oblique componentstraveling to the first part 51 to the amount of vertical componentstraveling to the first part 51 is larger than a ratio of the amount ofoblique components traveling to the second part 52 to the amount ofvertical components traveling to the second part 52. In other words, theoblique components are likely to arrive in the first part 51 rather thanthe second part 52.

The first part 51 is formed of the shield walls 35. In other words, inthe first part 51, a larger number of the shield walls 35 are arrangedthan that of the first and second communicating walls 36 and 37. Thatis, the number of the shield walls 35 in the first part 51 is largerthan the total number of the first communicating walls 36 and the secondcommunicating walls 37 in the first part 51. The first and secondcommunicating walls 36 and 37 can be provided in the first part 51 inaddition to the shield walls 35.

The second part 52 is formed of the first and second communicating walls36 and 37. In other words, in the second part 52, a larger number of thefirst and second communicating walls 36 and 37 than that of the shieldwalls 35 are disposed. That is, the total number of the firstcommunicating walls 36 and the second communicating walls 37 in thesecond part 52 is larger than the number of the shield walls 35 in thesecond part 52. The shield walls 35 can be provided in addition to thefirst and second communicating walls 36 and 37 in the second part 52.Further, the second part 52 can be formed of only either of the firstcommunicating walls 36 and the second communicating walls 37.

With the first part 51 formed of only one kind of the shield walls 35,the first communicating walls 36, and the second communicating walls 37,the second part 52 includes another kind of the shield walls 35, thefirst communicating walls 36, and the second communicating walls 37.That is, component ratios of the shield walls 35, the firstcommunicating walls 36, and the second communicating walls 37 in thefirst part 51 and the second part 52 are different from each other.

The second part 52 includes locations in the outer periphery, forexample, in which the vertical components of the particles C are morelikely to arrive than other locations. In the outer periphery of thesecond part 52, a larger number of the second communicating walls 37 arearranged than that of the first communicating walls 36. The locationswhere the vertical components are likely to arrive are not limitedthereto, and change depending on various conditions.

As described above, in the rectifier 32, the shield walls 35, the firstcommunicating walls 36, and the second communicating walls 37 are set ina predetermined disposition in accordance with the shape of the target12 placed on the inner face 21 a of the top wall 21. That is, thepositions of the shield walls 35, the first communicating walls 36, andthe second communicating walls 37 in the rectifier 32 are setcorresponding to the shape of the target 12. In other words, thepassages (the first and second communicating holes 41 and 42) areunevenly set in the walls (the shield walls 35, the first communicatingwalls 36, and the second communicating walls 37) of the collimator 14.

The positions of the first part 51 and the second part 52 are notlimited to the above positions. When the ratio of the amount of obliquecomponents to that of vertical components traveling toward the firstpart 51 is larger than the ratio of the amount of oblique components andthat of vertical components traveling toward the second part 52, thefirst and second parts 51 and 52 can be provided at other positions.That is, the first and second parts 51 and 52 are set based on theamounts of vertical components and oblique components at the respectivepositions in the collimator 14.

Further, the disposition of the shield walls 35, the first communicatingwalls 36, and the second communicating walls 37 is not limited to theone described above. For example, the density of the shield walls 35,the first communicating walls 36, and the second communicating walls 37can be set also based on various factors such as the shape of the target12, the position of the collimator 14, and an applied voltage.

The above collimator 14 can be additive manufactured, for example, by a3D printer. Thereby, the first and second communicating walls 36 and 37provided with the first and second communicating holes 41 and 42 can beeasily formed. The collimator 14 can be manufactured by another methodin addition to the above method. The collimator 14 is made from metal,for example, but it can also be made from other materials.

As illustrated in FIG. 4, the particles C fly from the bottom face 12 aof the target 12. Vertically flying particles C fly through the throughholes 39 of the collimator 14 toward the semiconductor wafer 2 supportedon the stage 13. The vertically flying particles C may attach to, forexample, the top ends 35 a, 36 a, and 37 a of the shield walls 35, thefirst communicating walls 36, and the second communicating walls 37.

Meanwhile, there are particles C flying in an inclined direction withrespect to the vertical direction (inclined direction). The flyingparticles C inclined at an angle over a predetermined range relative tothe vertical direction attach to the shield walls 35, the firstcommunicating walls 36, and the second communicating walls 37. That is,the collimator 14 blocks the flying particles C vertically inclined atthe angle outside the predetermined range.

The flying particles C vertically inclined at an angle within apredetermined range fly through the through holes 39 of the collimator14 toward the semiconductor wafer 2 supported on the stage 13. Theparticles C flying in the inclined direction can pass through the firstcommunicating holes 41 of the first communicating walls 36 or the secondcommunicating holes 42 of the second communicating walls 37. Theparticles C vertically inclined at the angle outside the predeterminedrange may also attach to the shield walls 35, the first communicatingwalls 36, and the second communicating walls 37.

The particles C having passed through the through holes 39 of thecollimator 14 attach to and accumulate on the semiconductor wafer 2 toform a film on the semiconductor wafer 2. In other words, thesemiconductor wafer 2 receives the particles C emitted from the target12. The orientations (directions) of the particles C having passedthrough the through holes 39 are vertically aligned within apredetermined range. Thus, the directions of the particles C to bedeposited on the semiconductor wafer 2 are controlled according to theshape of the collimator 14.

In the collimator 14 of the sputtering apparatus 1 according to thefirst embodiment, the vertically extending through holes 39 are formedby the shield walls 35, and the first and second communicating walls 36and 37 provided with the first and second communicating through holes 41and 42. Thereby, the particles, which are emitted from the target 12 ina vertically inclined direction (inclined direction), can pass throughthe first and second communicating through holes 41 and 42 of the firstand second communicating walls 36 and 37. In this manner, the collimator14 of the sputtering apparatus 1 can allow the particles C, emitted fromthe target 12 at a vertical inclination within the predetermined anglerange, to pass through, and block the particles C emitted from thetarget 12 at a large vertical inclination over the predetermined anglerange. Thereby, the sputtering apparatus 1 can form a film from theparticles C flying in an inclined direction, improving sputteringefficiency. The particles C flying at a vertical inclination angleoutside the predetermined range are blocked by the shield walls 35 andthe first and second communicating walls 36 and 37. Thus, the directionsof the particles C to be deposited can be controlled within thepredetermined range with respect to the vertical direction.

More first and second communicating walls 36 and 37 are arranged innumber than the shield walls 35 at the vertical positions facing thetarget 12. Because the particles C fly from the target 12 according tothe cosine law, the ratio of the particles flying with a verticalinclination within the predetermined range is high at the verticalpositions facing the target 12. By disposing a larger number of thefirst and second communicating walls 36 and 37 at these positions, theparticles C flying in the vertically inclined direction within thepredetermined range can pass through the first and second communicatingholes 41 and 42. Thus, a film can be formed from the particles C flyingin the vertically inclined direction within the predetermined range,improving the sputtering efficiency.

On the other hand, more shield walls 35 are arranged in number than thefirst and second communicating walls 36 and 37 at positions facing alocation offset vertically from the target 12. At the vertically offsetpositions from the target 12, the ratio of the particles C flying in thevertically inclined direction outside the predetermined range is high.By disposing a larger number of the shield walls 35 at these positions,the particles C flying in the vertically, largely inclined directionover the predetermined range can be blocked, more accurately controllingthe directions of the particles C to be deposited.

More shield walls 35 are arranged in number than the first and secondcommunicating walls 36 and 37 in the first part 51 in which theparticles C flying in the inclined direction (the oblique components)arrive at a higher ratio. Because the particles C fly from the target 12according to the cosine law, in the first part 51 in which the particlesC flying in the inclined direction arrive at a higher ratio, theparticles C flying vertically, largely inclined beyond the predeterminedrange also arrive at a higher ratio. Arranging a larger number of theshield walls 35 in the first part 51 makes it possible to block theflying particles C vertically, largely inclined over the predeterminedrange, and to more accurately control the directions of the particles Cto be deposited. Further, uniform sputtering is attainable as a whole.

In the second part 52 in which the vertically flying particles C arriveat a higher ratio, a larger number of the first and second communicatingwalls 36 and 37 are arranged than that of the shield walls 35. Becausethe particles C fly from the target 12 according to the cosine law, inthe second part 52 in which the vertically flying particles C arrive ata higher ratio, the flying particles C vertically inclined within thepredetermined range also arrive at a higher ratio. Arranging a largernumber of the first and second communicating walls 36 and 37 in thesecond part 52 makes it possible for the flying particles C verticallyinclined within the predetermined range to pass through the first andsecond communicating holes 41 and 42. Thereby, the flying particles Cvertically inclined within the predetermined range can be used to formfilms, improving the sputtering efficiency.

The shield walls 35, the first communicating walls 36, and the secondcommunicating walls 37 are in a predetermined disposition according tothe shape of the target 12. Thereby, the flying particles C verticallyinclined within the predetermined range can be used to form films,improving the sputtering efficiency. Further, the flying particles Cvertically, largely inclined over the predetermined range can beblocked, to more accurately control the directions of the particles C tobe deposited.

The density of the second communicating holes 42 in the secondcommunicating walls 37 is higher than that in the first communicatingwalls 36. That is, the second communicating walls 37 can allow moreflying particles C in the inclined direction to pass therethrough thanthe first communicating walls 36. Thereby, the first and secondcommunicating walls 36 and 37 can be arranged in line with thedistribution in the flying directions of the particles C, to efficientlyuse the flying particles C vertically inclined within the predeterminedrange for forming films.

The top ends 35 a, 36 a, and 37 a of the shield walls 35, the firstcommunicating walls 36, and the second communicating walls 37 that facethe inner face 21 a of the top wall 21 form the top end 32 a of therectifier 32, the top end 32 a depressed with respect to the inner face21 a. This makes it difficult for the flying particles C from the centerof the target 12 in the vertically inclined direction within thepredetermined range to be blocked by the shield walls 35, the firstcommunicating walls 36, and the second communicating walls 37. Thereby,the flying particles C vertically inclined within the predeterminedrange can be efficiently used to form films.

The bottom ends 35 b, 36 b, and 37 b of the shield walls 35, the firstcommunicating walls 36, and the second communicating walls 37 form thebottom end 32 b of the rectifier 32, the bottom end 32 b projectingtoward the mount face 13 a of the stage 13. This makes it possible forthe flying particles C front the end of the target 12 with a verticalinclination at a larger angle than the predetermined range to beaccurately blocked by the shield walls 35, the first communicating walls36, and the second communicating walls 37. Thus, the directions of theparticles C to be deposited can be controlled accurately.

The first and second communicating holes 41 and 42 have a longervertical length than a horizontal length. This makes it difficult forthe flying particles C vertically inclined within the predeterminedrange to be blocked by the shield walls 35, the first communicatingwalls 36, and the second communicating walls 37. Thus, the flyingparticles C vertically inclined within the predetermined range can beefficiently used to form a film.

A second embodiment is described below with reference to FIG. 5. In thefollowing embodiments, constituent elements having identical functionsas those of the above constituent elements are denoted by the samereference signs, and redundant explanations thereof may be omitted. Theconstituent elements denoted by the reference signs may not have commonfunctions and properties and can have different functions and propertiesaccording to the respective embodiments.

FIG. 5 is a sectional view schematically illustrating a part of thecollimator 14 according to the second embodiment. As illustrated in FIG.5, the shield walls 35, the first communicating walls 36, and the secondcommunicating walls 37 increase in thickness from the top ends 35 a, 36a, and 37 a to the bottom ends 35 b, 36 b, and 37 b, respectively. Inother words, the sectional areas of the through holes 39 decrease fromthe top end 32 a to the bottom end 32 b of the rectifier 32.

The flying particles C from the target 12 may attach to and accumulateon the shield walls 35, the first communicating walls 36, and the secondcommunicating walls 37. The particles C form a film 61 on the surfacesof the shield walls 35, the first communicating walls 36, and the secondcommunicating walls 37.

Having the film 61 formed thereon, the collimator 14 may be cleaned inorder to remove the film 61. For example, the collimator 14 is immersedin a cleaning liquid that dissolves the film 61. This removes the film61 from the surfaces of the shield walls 35, the first communicatingwalls 36, and the second communicating walls 37.

A length of time for which the collimator 14 is immersed in the cleaningliquid is set, for example, depending on the thickness of a thickestpart of the film 61. Meanwhile, the cleaning liquid may dissolve thecollimator 14. Because of this, the more even the thickness of the film61 is, the further inhibited the dissolution of the collimator 14 is,resulting in increasing the durable life of the collimator 14.

In the sputtering apparatus 1 according to the second embodiment, theshield walls 35, the first communicating walls 36, and the secondcommunicating walls 37 become thicker from the top ends 35 a, 36 a, and37 a toward the bottom ends 35 b, 36 b, and 37 b. This makes it possiblefor the flying particles C from the target 12 to attach uniformly to thesurfaces of the shield walls 35, the first communicating walls 36, andthe second communicating walls 37. That is, the thickness of the film 61becomes more uniform. In other words, the film 61 is inhibited frombeing formed only on the top ends 35 a, 36 a, and 37 a of the shieldwalls 35, the first communicating walls 36, and the second communicatingwalls 37. Thus, the collimator 14 is inhibited from dissolving at thetime of cleaning the film 61 of the particles C adhering to thecollimator 14, thereby further increasing the durable life of thecollimator 14.

Further, the flying particles C from the target 12 are likely to attachmore uniformly to the surfaces of the shield walls 35, the firstcommunicating walls 36, and the second communicating walls 37,therefore, the shield walls 35, the first communicating walls 36, thesecond communicating walls 37 can more securely hold the particles Cthereon. This can inhibit the particles C attaching to the surfaces ofthe shield walls 35, the first communicating walls 36, and the secondcommunicating walls 37 from falling, for example, onto the semiconductorwafer 2.

A third embodiment is described below with reference to FIG. 6. FIG. 6is a sectional view schematically illustrating a part of the collimator14 according to the third embodiment. As illustrated in FIG. 6, thefirst and second communicating holes 41 and 42 extend in a verticallyinclined direction. The extending direction of the first and secondcommunicating holes 41 and 42 is vertically inclined at an angle withina predetermined range. The extending direction of the firstcommunicating holes 41 and the extending direction of the secondcommunicating holes 42 can be different from each other.

As described above, the particles C may fly from the target 12 in avertically inclined direction. As the flying direction of the particlesC comes closer to the extending directions of the first and secondcommunicating holes 41 and 42, the particles C can more easily passthrough the first and second communicating holes 41 and 42.

In the sputtering apparatus 1 according to the third embodiment, thefirst and second communicating holes 41 and 42 extend in the verticallyinclined direction. The flying particles C in the direction closer tothe extending directions of the first and second communicating holes 41and 42 are more likely to pass through the first and secondcommunicating holes 41 and 42. Thereby, the directions of the particlesC to be deposited can be controlled more accurately.

FIG. 7 is a sectional view schematically illustrating a part of thecollimator 14 according to a first modification of the third embodiment.In the third embodiment, the first and second communicating holes 41 and42 extend in the vertically inclined direction at the same angle.However, as illustrated in FIG. 7, the first and second communicatingholes 41 and 42 can be a combination of holes extending at aninclination angle and extending at a different inclination angle, forexample.

In the example illustrated in FIG. 7, the first and second communicatingholes 41 and 42 are a combination of holes extending with a verticalinclination at −45° and extending with a vertical inclination at 45°. Inthis case, a sectional shape of a part 36 c of the first communicatingwall 36 located between two adjacent first communicating holes 41 issubstantially rhombic. The first and second communicating walls 36 and37 having such the first and second communicating holes 41 and 42 canallow to pass therethrough the particles C of the oblique componentsflying from either of the two adjacent through holes 39. The shapes ofthe first and second communicating holes 41 and 42 are not limitedthereto.

FIG. 8 is a sectional view schematically illustrating a part of thecollimator 14 according to a second modification of the thirdembodiment. FIG. 8 illustrates an example of the first communicatingwall 36 and the second communicating wall 37. As illustrated in FIG. 8,the first communicating holes 41 or the second communicating holes 42each include first inclined holes 41 a and 42 a and second inclinedholes 41 b and 42 b. The first inclined holes 41 a and 42 a are anexample of a first extension passage. The second inclined holes 41 b and42 b are both an example of a second extension passage.

The first inclined holes 41 a and 42 a both extend with a verticalinclination at −75°. The second inclined holes 41 b and 42 b both extendwith a vertical inclination at 75°. In other words, the second inclinedholes 41 b and 42 b extend in a direction intersecting with the firstinclined holes 41 a and 42 a. Ends of the first inclined holes 41 a and42 a are connected to ends of the second inclined holes 41 b and 42 b.

The ends of the first inclined holes 41 a and 42 a in the modificationillustrated in FIG. 8 are connected to the ends of the second inclinedholes 41 b and 42 b. This inhibits the first inclined holes 41 a and 42a and the second inclined holes 41 b and 42 b from expanding and fromallowing the flying particles C at an undesired inclination angle topass therethrough. That is, the first inclined holes 41 a and 42 a canallow only the inclined particles C within a desired angle range (−75°±αwith respect to the vertical direction) to pass therethrough. The secondinclined holes 41 b and 42 b can allow only the inclined particles Cwithin a desired angle range (75°±α with respect to the verticaldirection) therethrough.

FIG. 9 is a sectional view schematically illustrating a part of thecollimator 14 according to a third modification of the third embodiment.FIG. 9 illustrates an example of the first communicating wall 36 and thesecond communicating wall 37. As illustrated in FIG. 9, the firstcommunicating holes 41 or second communicating holes 42 each includefirst inclined holes 41 a and 42 a and second inclined holes 41 b and 42b.

The first inclined holes 41 a and 42 a intersect with the secondinclined holes 41 b and 42 b. On one face of the first or secondcommunicating wall 36 or 37, a part of the first or second communicatingwall 36 or 37 lies between the first inclined holes 41 a and 42 a andthe second inclined holes 41 b and 42 b. Similarly, on the other face ofthe first or second communicating wall 36 or 37, a part of the first orsecond communicating wall 36 or 37 lies between the first inclined holes41 a and 42 a and the second inclined holes 41 b and 42 b.

On one face of the first or second communicating wall 36 or 37 in themodification illustrated in FIG. 9, a part of the first or secondcommunicating wall 36 or 37 lies between the first inclined holes 41 aand 42 a and the second inclined holes 41 b and 42 b. This inhibits thefirst inclined holes 41 a and 42 a and the second inclined holes 41 band 42 b from expanding and from allowing the flying particles C at anundesired inclination angle to pass therethrough.

FIG. 10 is a sectional view schematically illustrating a part of thecollimator 14 according to a fourth modification of the thirdembodiment. FIG. 10 illustrates an example of the first communicatingwall 36 and the second communicating wall 37. As illustrated in FIG. 10,the first communicating holes 41 or the second communicating holes 42include first inclined holes 41 a and 42 a and second inclined holes 41b and 42 b, respectively.

The first inclined holes 41 a and 42 a both extend with a verticalinclination at about −75°. The second inclined holes 41 b and 42 b bothextend with a vertical inclination at about 75°. In other words, thesecond inclined holes 41 b and 42 b extend in a direction intersectingwith the first inclined holes 41 a and 42 a. The ends of the firstinclined holes 41 a and 42 a are connected to the ends of the secondinclined holes 41 b and 42 b.

The first or second communicating wall 36 or 37 with the first inclinedholes 41 a and 42 a and the second inclined holes 41 b and 42 b includesfirst separation walls 65 and second separation walls 66.

The first separation walls 65 form one face of the first or secondcommunicating wall 36 or 37. The first separation walls 65 arevertically aligned with a gap. The gaps among the first separation walls65 form the ends of the first inclined holes 41 a and 42 a or the endsof the second inclined holes 41 b and 42 b.

The second separation walls 66 form the other face of the first orsecond communicating wall 36 or 37. The second separation walls 66 arevertically aligned with a gap. The gaps among the second separationwalls 66 form the ends of the first inclined holes 41 a and 42 a or theends of the second inclined holes 41 b and 42 b.

The first separation walls 65 and the second separation walls 66 arehorizontally separated from each other with a gap. This creates avertically extending clearance 67 between the first separation walls 65and the second separation walls 66.

The first separation walls 65 in the modification illustrated in FIG. 10are vertically aligned with a gap. The second separation walls 66 arevertically aligned with a gap. This inhibits the first inclined holes 41a and 42 a and the second inclined holes 41 b and 42 b from expandingand from allowing the flying particles C at an undesired inclinationangle to pass therethrough.

Further, the vertically extending clearance 67 is formed between thefirst separation walls 65 and the second separation walls 66. Thereby,vertically flying particles C can pass through the clearance 67 betweenthe first separation walls 65 and the second separation walls 66.

A fourth embodiment is described below with reference to FIG. 11. FIG.11 is a perspective view schematically illustrating a part of thecollimator 14 according to the fourth embodiment. FIG. 11 illustrates anexample of the first communicating wall 36 and the second communicatingwall 37.

As illustrated in FIG. 11, some of the first or second communicatingholes 41 and 42 extend up to the top end 36 a or 37 a of the first orsecond communicating wall 36 or 37. Further, some of the first or secondcommunicating holes 41 and 42 extend down to the bottom end 36 b or 37 bof the first or second communicating wall 36 or 37. That is, the firstor second communicating holes 41 or 42 include not only holes but alsocutouts opened in one direction (for example, upward or downward) andslits opened in different directions (for example, upward and downward).

In the sputtering apparatus 1 according to the fourth embodiment, someof the first or second communicating holes 41 and 42 extend up to thetop end 36 a or 37 a or down to the bottom end 36 b or 37 b of the firstor second communicating wall 36 or 37. Thereby, the flying particles Cin an inclined direction can easily pass through the first or secondcommunicating holes 41 and 42.

A fifth embodiment is described below with reference to FIG. 12. FIG. 12is a plan view of the collimator 14 according to the fifth embodiment.As illustrated in FIG. 12, the collimator 14 according to the fifthembodiment includes circular walls 71 and connecting walls 72.

The circular walls 71 are arc-like parts arranged concentrically withthe frame 31. The connecting walls 72 are linear parts, extendingradially from the center of the frame 31. The connecting walls 72connect the circular walls 71 with the frame 31.

The shield walls 35, the first communicating walls 36, and the secondcommunicating walls 37 form the circular walls 71 and the connectingwalls 72. That is, the circular walls 71 and the connecting walls 72 areeach formed of any of the shield walls 35, the first communicating walls36, and the second communicating walls 37. In other words, thecollimator 14 includes the circular walls 71 and the connecting walls 72formed of the shield wall 35, the circular walls 71 and the connectingwalls 72 formed of the first communicating walls 36, and the circularwalls 71 and the connecting walls 72 formed of the second communicatingwalls 37. The circular walls 71 and the connecting walls 72 can beformed of one or two of the shield walls 35, the first communicatingwalls 36, and the second communicating walls 37.

In the sputtering apparatus 1 according to the fifth embodiment, theshield walls 35, the first communicating walls 36, and the secondcommunicating walls 37 form the circular walls 71 arrangedconcentrically, and the connecting walls 72 that connect the circularwalls 71 with each other. Thereby, having passed through the throughholes 39 of the collimator 14, the particles C form a film in aconcentric form corresponding to the shape of a circular semiconductorwafer 2.

A sixth embodiment is described below with reference to FIG. 13. FIG. 13is a sectional view schematically illustrating the sputtering apparatus1 according to the sixth embodiment. As illustrated in FIG. 13, thesputtering apparatus 1 according to the sixth embodiment includes threestages 13 and three collimators 14.

In the following description, the three stages 13 may be referred to asstages 13A and 13B individually. One stage 13A is an example of a firststage. Two stages 13B are an example of a second-object mount.

Further, in the following description, the three collimators 14 may bereferred to as collimators 14A and 14B individually. One collimator 14Ais an example of a first collimator. Two collimators 14B are an exampleof a second collimator.

The shape and position of the stage 13A are the same as those of thestage 13 according to any one of the first to fifth embodiments. Theshape and position of the collimator 14A are the same as those of thecollimator 14 according to any one of the first to fifth embodiments.

The processing chamber 11 further includes inclined walls 81. Theinclined walls 81 are interposed between the bottom wall 22 and the sidewalls 23. The inclined walls 81 incline obliquely to the bottom wall 22.The stages 13B are attached to the inclined walls 81.

The stages 13B are spaced apart from the target 12 in an inclineddirection (hereinafter, inclination-reference direction). Theinclination-reference direction is an example of an inclined directionwith respect to the first direction and a direction from the generatormount to the second-object mount. The distance between the target 12 andthe stages 13B is substantially the same as the distance between thetarget 12 and the stage 13A.

The stages 13B also have the mount faces 13 a. The mount faces 13 a ofthe stages 13B support semiconductor wafers 2. The semiconductor wafers2 supported on the stages 13B are an example of a second object.

The mount faces 13 a of the stages 13B are an example of a second-objectmount. The mount faces 13 a of the stages 13B are substantially flat,facing in the inclination-reference direction. The mount faces 13 a ofthe stage 13B are spaced apart from the inner face 21 a of the top wall21 in the inclination-reference direction. The semiconductor wafers 2are placed on the mount faces 13 a of the stages 13B.

The collimators 14B are placed between the target 12 and the stages 13Bin the inclination-reference direction. The shape of the collimators 14Bis substantially the same as that of the collimator 14A. That is, thecollimators 14B each include the frame 31 and the rectifier 32 as withthe collimator 14A. The rectifiers 32 of the collimators 14B include theshield walls 35, the first communicating walls 36, and the secondcommunicating walls 37 as with that of the collimator 14A.

The shield walls 35 of the collimators 14B are an example of a thirdwall. The first and second communicating walls 36 and 37 of thecollimators 14B are an example of a fourth wall. The first and secondcommunicating holes 41 and 42 of the collimators 14B are an example of asecond passage.

The shield walls 35, the first communicating walls 36, and the secondcommunicating walls 37 of the collimators 14B form the through holes 39,as those of the collimator 14A. The through holes 39 of the collimators14B are an example of a second through hole. The through holes 39 of thecollimators 14B extend in the inclination-reference direction.

The particles C fly from the bottom face 12 a of the target 12. Theflying particles C and the flying particles C with a verticalinclination within a predetermined range fly through the through holes39 of the collimator 14A toward the semiconductor wafer 2 supported onthe stage 13A. Thereby, the particles C are deposited on the surface ofthe semiconductor wafer 2 supported on the stage 13A.

Meanwhile, the flying particles C in the inclination-reference directionand the flying particles C with an inclination within a predeterminedrange with respect to the inclination-reference direction fly throughthe through holes 39 of the collimators 14B toward the semiconductorwafers 2 supported on the stages 13B. Thereby, the particles C are alsodeposited on the surfaces of the semiconductor wafers 2 supported on thestages 13B. In other words, the semiconductor wafers 2 placed on themount faces 13 a of the stages 13B receive the particles C emitted fromthe target 12.

The sputtering apparatus 1 according to the sixth embodiment includesthe stages 13B distant away from the target 12 in theinclination-reference direction, and the collimators 14B with thethrough holes 39 extending in the inclination-reference direction.Thereby, the sputtering apparatus 1 can use the flying particles C fromthe target 12 in the inclination-reference direction to form a film,further improving the sputtering efficiency. In other words, thesputtering apparatus 1 can use the flying particles C toward the sidewalls 23 of the processing chamber 11 to form a film, thereby improvingthroughput.

A seventh embodiment is described below with reference to FIG. 14. FIG.14 is a sectional view schematically illustrating the target 12 and thecollimator 14 according to the seventh embodiment. As illustrated inFIG. 14, third communicating holes 91 are provided in the frame 31 ofthe collimator 14.

The third communicating holes 91 are, for example, parallelogram holesvertically or horizontally aligned. The shape and arrangement of thethird communicating holes 91 are not limited thereto. The thirdcommunicating holes 91 have a longer vertical length than a horizontallength. That is, the third communicating holes 91 are verticallyextending holes.

The third communicating holes 91 connect the through holes 39 adjacentto the frame 31 to the outside of the frame 31 in a radial direction ofthe collimator 14. In other words, the third communicating holes 91penetrate the frame 31.

The particles C fly from the bottom face 12 a of the target 12. Theflying particles C vertically inclined at an angle over a predeterminedrange may pass through the third communicating holes 91. For example, ina case where a number of semiconductor wafers 2 are placed in thesputtering apparatus 1, the particles C having passed through the thirdcommunicating holes 91 may adhere to semiconductor wafers 2 differentfrom the semiconductor wafer 2 located below the collimator 14.

In the sputtering apparatus 1 according to the seventh embodiment, theframe 31 is provided with the third communicating holes 91. For example,the semiconductor wafer 2, to which a small amount of flying particles Cat a vertically inclined angle over the predetermined range adhere, mayexert a desired property. In this case, the particles C having passedthrough the third communicating holes 91 can be used to form films,thereby improving the sputtering efficiency. In the sputtering apparatus1 in which one semiconductor wafer 2 is placed, the frame 31 can be alsoprovided with the third communicating holes 91.

An eighth embodiment is described below with reference to FIG. 15. FIG.15 is a sectional view schematically illustrating the target 12 and thecollimator 14 according to the eighth embodiment. As illustrated in FIG.15, a fourth communicating hole 95 is provided in each shield wall 35according to the eighth embodiment.

The fourth communicating holes 95 are for example parallelogram holeshorizontally aligned. The shape and arrangement of the fourthcommunicating holes 95 are not limited thereto. The fourth communicatingholes 95 have a longer vertical length than a horizontal length. Thatis, the fourth communicating holes 95 are vertically extending holes.

The fourth communicating holes 95 each connect two through holes 39separated by the shield wall 35 provided with the fourth communicatinghole 95. In other words, each fourth communicating hole 95 opens intoone through hole 39 and its adjacent through hole 39.

The fourth communicating holes 95 are smaller than the firstcommunicating holes 41. The density of the fourth communicating holes 95in the shield walls 35 is lower than that of the first communicatingholes 41 in the first communicating walls 36. Further, the density ofthe fourth communicating holes 95 in the shield walls 35 is lower thanthat of the second communicating holes 42 in the second communicatingwalls 37.

As described in the eighth embodiment, the shield walls 35 as an exampleof the first wall may be provided with a passage such as the fourthcommunicating hole 95. That is, all the walls (the shield walls 35, thefirst communicating walls 36, and the second communicating walls 37)forming the through holes 39 may be provided with passages such as thefirst, second, and fourth communicating holes 41, 42, and 95. The shieldwalls 35 of the collimators 14B according to the sixth embodimentexemplifying the third wall may be provided with a passage such as thefourth communicating hole 95.

In at least one of the embodiments described above, the sputteringapparatus 1 is an example of a processing apparatus. However, theprocessing apparatus can be another apparatus such as a depositionapparatus or an X-ray computed tomography scanner.

In case of using the processing apparatus for a deposition apparatus,for example, a material to be evaporated is an example of the particlegenerator, the vapor generated from the material is an example of theparticles, and a processing target to be evaporated is an example of thefirst object. The vapor being a gasified substance contains one or twoor more kinds of molecules. The molecules are particles. In thedeposition apparatus, the collimator 14 is placed, for example, betweena position of the material to be evaporated and a position of theprocessing target.

In case of using the processing apparatus for an X-ray computedtomography scanner, for example, an X-ray tube that emits X-rays is anexample of the particle generator, the X-rays are an example of theparticles, and a subject to be irradiated with the X-rays is an exampleof the first object. The X-rays are a kind of electromagnetic waveswhich are microscopically photons as a type of elemental particles. Theelement particles are particles. In the X-ray computed tomographyscanner, the collimator 14 is placed, for example, between a position ofthe X-ray tube and a position of the subject.

In the X-ray computed tomography scanner, the X-ray irradiation amountfrom the X-ray tube is uneven in an irradiation area. Provided with thecollimator 14, the X-ray computed tomography scanner can uniformlyirradiate the amount of X-rays in the irradiation area. It further canadjust the irradiation area. In addition, it can prevent unnecessaryradiation exposure.

According to at least one of the embodiments described above, the firstwalls and the second walls provided with the first passages of the firstcollimator form the first through holes extending in the firstdirection. Thereby, the particles emitted from a particle generator inan inclined direction with respect to the first direction within apredetermined angle range can pass through the first passages, and theparticles emitted from the particle generator in a direction largelyinclined over the predetermined angle range with respect to the firstdirection can be blocked.

While certain embodiments have been described, these embodiments havebeen presented by way of example only, and are not intended to limit thescope of the inventions. Indeed, the novel embodiments described hereinmay be embodied in a variety of other forms; furthermore, variousomissions, substitutions and changes in the form of the embodimentsdescribed herein may be made without departing from the spirit of theinventions. The accompanying claims and their equivalents are intendedto cover such forms or modifications as would fall within the scope andspirit of the inventions.

The invention claimed is:
 1. A processing apparatus comprising: agenerator mount on which a particle generator is placed, the particlegenerator capable of emitting particles; a first-object mount spacedapart from the generator mount, on which a first object is placed, thefirst object that receives the particles; and a first collimator placedbetween the generator mount and the first-object mount, including firstwalls, second walls, a first end facing the generator mount, and asecond end being opposite to the first end and facing the first-objectmount, in which the first walls and the second walls form first throughholes extending in a first direction from the generator mount to thefirst-object mount, and each of the second walls is provided with atleast one first passage which penetrates the second wall and throughwhich the particles can pass, wherein the first walls and the secondwalls become thicker in thickness from the first end to the second end,areas of cross sections of each of the first through holes decrease fromthe first end toward the second end when the cross sections are taken inplanes orthogonal to the first direction, the first passage connects twoof the first through holes that are partitioned with the second wall,and the second walls include a first communicating wall and a secondcommunicating wall, a density of the first passage in the secondcommunicating wall being larger than a density of the first passage inthe first communicating wall.
 2. The processing apparatus according toclaim 1, wherein in a region of the first collimator configured to facethe particle generator, a larger number of the second walls are arrangedthan that of the first walls, and in a region of the first collimatoroffset from the particle generator, a larger number of the first wallsare arranged than that of the second walls.
 3. The processing apparatusaccording to claim 1, wherein the first collimator includes a first partand a second part, a ratio of an amount of the particles, which areemitted from the particle generator in an inclined direction withrespect to the first direction and travel to the first part, to anamount of the particles, which are emitted from the particle generatorin the first direction and travel to the first part, is larger than aratio of an amount of the particles, which are emitted from the particlegenerator in the inclined direction with respect to the first directionand travel to the second part, to an amount of the particles, which areemitted from the particle generator in the first direction and travel tothe second part, a larger number of the first walls are arranged thanthat of the second walls in the first part, and a larger number of thesecond walls are arranged than that of the first walls in the secondpart.
 4. The processing apparatus according to claim 1, wherein thefirst walls and the second walls are arranged in a predetermineddistribution in accordance with a shape of the particle generator to beplaced on the generator mount.
 5. The processing apparatus according toclaim 1, wherein the first end of the first walls and the second wallsfacing the generator mount forms one end of the first collimator, theone end depressed with respect to the generator mount.
 6. The processingapparatus according to claim 1, wherein a length of the first passage islonger in the first direction than in a second direction orthogonal tothe first direction.
 7. The processing apparatus according to claim 1,wherein the first walls and the second walls form circular walls andconnecting walls, the circular walls being arranged concentrically, theconnecting walls connecting the circular walls with each other.
 8. Theprocessing apparatus according to claim 1, further comprising: asecond-object mount spaced apart from the generator mount in an inclineddirection with respect to the first direction, the second-object mounton which a second object that receives the particles is placed; and asecond collimator placed between the generator mount and thesecond-object mount, including third walls and fourth walls, in whichthe third walls and the fourth walls form second through holes extendingin a third direction from the generator mount to the second-objectmount, and each of the fourth walls is provided with at least one secondpassage which penetrates the fourth walls and through which theparticles can pass.
 9. A collimator comprising first walls and secondwalls that form through holes extending in an extending direction from afirst end to a second end being opposite to the first end, each of thesecond walls provided with at least one passage that penetrates thesecond wall and through which a particle can pass, wherein the firstwalls and the second walls become thicker from the first end to thesecond end in the extending direction of the through holes, areas ofcross sections of each of the through holes decrease from the first endtoward the second end when the cross sections are taken in planesorthogonal to the extending direction, the passage connects two of thethrough holes that are partitioned with the second wall, and the secondwalls include a first communicating wall and a second communicatingwall, a density of the passage in the second communicating wall beinglarger than a density of the passage in the first communicating wall.10. The collimator according to claim 9, wherein the first end of thefirst walls and the second walls in the extending direction of thethrough holes forms one end of the collimator, the one end beingdepressed.
 11. The collimator according to claim 9, wherein a length ofthe passage is longer in the extending direction of the through holesthan in a direction orthogonal to the extending direction of the throughholes.
 12. The collimator according to claim 9, wherein the first wallsand the second walls form circular walls and connecting walls, thecircular walls being arranged concentrically, the connecting wallsconnecting the circular walls with each other.
 13. A processingapparatus comprising: a generator mount on which a particle generatorcapable of emitting particles is placed; an emission target spaced apartfrom the generator mount in a direction in which the particle generatoron the generator mount emits at least one particle; and a collimatorincluding a first end facing the generator mount, and a second end beingopposite to the first end and facing the emission target, and walls, thewalls forming through holes extending in an extending direction from thegenerator mount to the emission target, at least one of the walls beingprovided with at least one passage that penetrates the wall and throughwhich the particles can pass, wherein the walls become thicker from thefirst end to the second end, and areas of cross sections of each of thethrough holes decrease from the first end toward the second end when thecross sections are taken in planes orthogonal to the extendingdirection, the passage connects two of the through holes that arepartitioned with the at least one of the walls being provided with theat least one passage, and the walls include a first communicating walland a second communicating wall, a density of the passage in the secondcommunicating wall being larger than a density of the passage in thefirst communicating wall.